全国统一电话
全国统一电话
万代带反并联二极管的IGBT产品型号及应用参数
|
| IC (max) | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 25°C | |||||||||||||
| V | A | A | A | V | mJ | mJ | V | µC | A | ||||
| New | TO220F | IGBT with Anti-Parallel Diode | 650 | 16 | 8 | 1.8 | 0.16 | 0.11 | 22 | 1.52 | 0.2 | 3.49 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 600 | 20 | 10 | 1.53 | 0.26 | 0.07 | 17.4 | 1.52 | 0.25 | 5 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 650 | 20 | 10 | 1.6 | 0.18 | 0.13 | 24 | 1.9 | 0.4 | 3.8 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 600 | 30 | 15 | 1.6 | 0.42 | 0.11 | 25.4 | 1.43 | 0.48 | 5.8 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 650 | 30 | 15 | 1.7 | 0.29 | 0.2 | 32 | 1.77 | 0.7 | 4.7 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 650 | 30 | 15 | 1.7 | 0.29 | 0.2 | 32 | 1.65 | 0.24 | 3.7 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 650 | 40 | 20 | 1.7 | 0.47 | 0.27 | 46 | 1.66 | 0.8 | 5.2 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 600 | 10 | 5 | 1.55 | 0.14 | 0.04 | 9.4 | 1.46 | 0.23 | 4.4 | |
| Full Production | TO263 | IGBT with Anti-Parallel Diode | 650 | 10 | 5 | 1.57 | 0.08 | 0.07 | 14 | 1.8 | 0.24 | 2.78 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 600 | 10 | 5 | 1.55 | 0.14 | 0.04 | 9.4 | 1.46 | 0.23 | 4.4 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 650 | 10 | 5 | 1.57 | 0.08 | 0.07 | 14 | 1.8 | 0.24 | 2.78 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 650 | 10 | - | 2.15 | 0.09 | 0.06 | 8.8 | 2.06 | 0.11 | 2.46 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 650 | 10 | 5 | 2.5 | 0.081 | 0.049 | 9.2 | 2.13 | 0.19 | 2.5 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 650 | 12 | 8 | 1.9 | 0.11 | 0.08 | 13.5 | 1.81 | 0.13 | 2.61 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 650 | 14 | 7 | 1.87 | 0.108 | 0.099 | 14 | 2.6 | 0.29 | 3 | |
| Full Production | TO252 | IGBT with Anti-Parallel Diode | 650 | 16 | 8 | 1.8 | 0.16 | 0.11 | 22 | 1.9 | 0.2 | 3.49 | |
| IC (max) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| 25°C | |||||||||||
| V | A | A | A | V | mJ | mJ | nC | ||||
| New | TO263 | IGBT Discrete | 650 | 60 | 30 | - | 1.86 | 0.88 | 0.35 | 52 | |
| Full Production | TO263 | IGBT Discrete | 650 | 60 | 30 | - | 1.86 | 0.74 | 0.33 | 52 | |
| Full Production | TO247 | IGBT Discrete | 600 | 60 | 30 | - | 2 | 1.1 | 0.24 | 34 | |
| Full Production | TO247 | IGBT Discrete | 600 | 80 | 40 | - | 1.85 | 1.55 | 0.3 | 45 | |
| Full Production | TO247 | IGBT Discrete | 650 | 80 | 40 | - | 1.9 | 1.27 | 0.46 | 63 | |
| Full Production | TO247 | IGBT Discrete | 650 | 80 | 40 | - | 2.05 | 1.17 | 0.54 | 61 | |
| Full Production | TO220 | IGBT Discrete | 650 | 80 | 40 | - | 1.9 | 1.27 | 0.46 | 63 | |
| 25°C | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| V | V | A | A | µC | A | nS | °C | ||||
| New | TO3PF | Fast Recovery Diodes (FRD) | 650 | 1.54 | 20 | 60 | 0.34 | 5.6 | 104 | 175 | |
| New | TO3PF | Fast Recovery Diodes (FRD) | 650 | 1.48 | 30 | 90 | 0.54 | 7.6 | 125 | 175 | |
| New | TO3PF | Fast Recovery Diodes (FRD) | 650 | 1.5 | 40 | 120 | 0.58 | 8 | 126 | 175 |
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